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| MWI 100-12 A8 IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 IC25 = 160 A = 1200 V VCES VCE(sat) typ. = 2.2 V 1 2 5 6 9 10 19 17 15 3 4 14, 20 7 8 11 12 IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25C TC = 80C VGE = 15 V; RG = 6.8 ; TVJ = 125C Clamped inductive load; L = 100 H Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 160 110 ICM = 200 VCEK VCES 10 640 V V A A A s W Features * NPT IGBT technology * low saturation voltage * low switching losses * switching frequency up to 30 kHz * square RBSOA, no latch up * high short circuit capability * positive temperature coefficient for easy parallelling * MOS input, voltage controlled * ultra fast free wheeling diodes * solderable pins for PCB mounting * package with copper base plate Advantages TC = 25C * space savings * reduced protection circuits * package designed for wave soldering Typical Applications * AC motor control * AC servo and robot drives * power supplies VCE = VCES; VGE = 15 V; RG = 6.8 ; TVJ = 125C non-repetitive Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.2 2.5 4.5 4 400 100 60 600 90 16.1 14.6 6.5 475 2.6 6.5 6.3 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.19 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 100 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 4 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 100 A VGE = 15 V; RG = 6.8 VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 100 A (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 1-4 451 MWI 100-12 A8 Diodes Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 200 130 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM trr RthJC Module Symbol TVJ TJM Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Conditions IF = 100 A; VGE = 0 V; TVJ = 25C TVJ = 125C IF = 120 A; diF/dt = -750 A/s; TVJ = 125C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.3 1.7 82 200 2.6 V V A ns 0.3 K/W IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.3 V; R0 = 12 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.27 V; R0 = 4.3 m Thermal Response Conditions operating Maximum Ratings -40...+125 +150 -40...+125 2500 3-6 C C C V~ Nm Free Wheeling Diode (typ.) Cth1 = 0.301 J/K; Rth1 = 0.238 K/W Cth2 = 2.005 J/K; Rth2 = 0.062 K/W IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions IGBT (typ.) Cth1 = 0.397 J/K; Rth1 = 0.141 K/W Cth2 = 2.243 J/K; Rth2 = 0.049 K/W Characteristic Values min. typ. max. 1.8 m mm mm 0.01 300 K/W g Creepage distance on surface Strike distance in air with heatsink compound 10 10 Dimensions in mm (1 mm = 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 2-4 451 MWI 100-12 A8 300 A VGE = 17 V 15 V 13 V 300 A 250 IC 200 VGE = 17 V 15 V 13 V 250 IC 200 TVJ = 25C 11 V TVJ = 125C 11 V 150 100 50 0 0 1 2 3 VCE 9V 150 100 50 0 9V 4 V 5 0 1 2 3 4 VCE 5 V6 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics A 200 VCE = 20 V 300 A 250 IF 200 150 TVJ = 125C TVJ = 125C IC 150 100 100 50 TVJ = 25C TVJ = 25C 50 0 4 5 6 7 8 VGE 0 9 10 V 11 0 1 2 VF 3 V Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 240 A IRM 15 V VGE 10 VCE = 600 V IC = 100 A 80 ns trr TVJ = 125C VR = 600 V IF = 100 A 180 60 t rr 40 120 5 60 IRM 20 0 0 100 200 300 400 nC 500 QG 0 0 200 400 600 -di/dt MWI00-12A8 0 800 A/s 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 451 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 3-4 MWI 100-12 A8 25 mJ td(on) 20 Eon VCE = 600 V VGE = 15 V RG = 6.8 TVJ = 125C 10 ns 8 t 6 4 2 Eoff 25 mJ 10 VCE = 600 V VGE = 15 V RG = 6.8 TVJ = 125C n 75 20 15 15 10 5 Eon 50 10 5 0 0 50 100 150 IC A 25 0 0 40 80 IC 0 120 A 160 0 200 Fig. 7 Typ. turn on energy and switching times versus collector current 40 mJ Eon 30 8 td(on) Fig. 8 Typ. turn off energy and switching times versus collector current 12 ns 10 t Eoff 30 mJ VCE = 600 V VGE = 15 V IC = 100 A TVJ = 125C n 20 20 VCE = 600 V VGE = 15 V IC = 100 A TVJ = 125C Eon 6 4 2 0 10 10 0 0 10 20 30 RG 40 50 0 0 10 20 30 RG 40 50 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 250 A Fig.10 Typ. turn off energy and switching times versus gate resistor 1 K/W 0.1 ZthJC diode IGBT 200 ICM 150 100 50 0 0 200 RG = 6:8 TVJ = 125C 0.01 0.001 single pulse 400 600 800 1000 1200 1400 V VCE 0.0001 0.0001 MWI100-12A8 0.001 0.01 0.1 t 1 s 10 Fig. 11 Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions. Fig. 12 Typ. transient thermal impedance 451 (c) 2004 IXYS All rights reserved 4-4 |
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